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Oxford Instruments, a leading precision instruments design and manufacturing conglomerate, is to cooperate with Taiwan’s Industrial Technology Research Institute (ITRI) on the development of next-gen compound semiconductors, aiming to develop a new industry chain for compound semiconductors in Taiwan, and to create new opportunities in the global market.

Eyeing the Asian market

ITRI Executive VP, Pei-Zen Chang, remarked that ITRI is an important stronghold of Oxford Instruments in the Asia-Pacific region. Both sides began cooperation on precision testing analysis 15 years ago, and have achieved excellent results in multiple fields such as HBLED, MEMS, Micro-LED, silicon photonics, and nanoanalysis. “The collaboration with Oxford Instrument will enhance the growth of next-gen semiconductor supply chain in Taiwan, allowing research and development to be implemented in system integration and multidisciplinary innovation. This will further boost the industrial transformation and economy development of Taiwan,” he said.

Representative of British Office in Taipei John Dennis remarked that the UK is a world leader in compound semiconductors for both fundamental and applied research, and the country has a number of important companies specialized in semiconductor production equipment, including Oxford Instruments. He was excited to see the collaboration between Oxford Instruments and ITRI in compound semiconductors, which will open the door to some really exciting advanced technologies including electric vehicles, 5G and other wireless technologies, and even the power converters on wind turbines.

Ian Barkshire, CEO of Oxford Instruments, pointed out that Oxford Instrument’s R&D base in ITRI, established since 2011, has allowed the company to accelerate its technology program and offer a better support for its Asian customers. With the new agreement signed, Oxford Instruments and ITRI will synergize the innovation, technological and end-market knowledge to drive the advances in semiconductor and power devices.

Boosting the yield rate

ITRI VP and General Director of the Electronic and Optoelectronic System Research Laboratories Chih-I Wu pointed out that ITRI has already developed GaN semiconductor technology to be applied in high-frequency communications, and it has cooperated with universities on epitaxy technology and ultra high frequency communication components.

According to Wu, the collaboration with Oxford Instruments on the development of compound semiconductors will help increase the yield rate of GaN’s High Electron Mobility Transistor (HEMT) component processing, and improve the source charging power and transistor performance.

 

 

Source: ITRI